SI7922DN-T1-GE3

Vishay / Siliconix
MOSFET 2N-CH 100V 1.8A 1212-8
Lead free / RoHS Compliant
Discrete Semiconductor Products
SI7922DN-T1-GE3.pdf
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Out Stock~~0 pcs~~: Minimum:1; Multiples:1; Manufacturer lead time 10 weeks

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Vgs(th) (Max) @ Id:	3.5V @ 250µA
Supplier Device Package:	PowerPAK® 1212-8 Dual
Series:	TrenchFET®
Rds On (Max) @ Id, Vgs:	195 mOhm @ 2.5A, 10V
Power - Max:	1.3W
Packaging:	Tape & Reel (TR)
Package / Case:	PowerPAK® 1212-8 Dual
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:	-
Gate Charge (Qg) (Max) @ Vgs:	8nC @ 10V
FET Type:	2 N-Channel (Dual)
FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	100V
Current - Continuous Drain (Id) @ 25°C:	1.8A