SI4900DY-T1-E3

Vishay / Siliconix
MOSFET 2N-CH 60V 5.3A 8-SOIC
Lead free / RoHS Compliant
Discrete Semiconductor Products
SI4900DY-T1-E3.pdf
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Out Stock~~0 pcs~~: Minimum:1; Multiples:1; Manufacturer lead time 10 weeks

Price
2500	$0.492
5000	$0.468

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Vgs(th) (Max) @ Id:	3V @ 250µA
Supplier Device Package:	8-SO
Series:	TrenchFET®
Rds On (Max) @ Id, Vgs:	58 mOhm @ 4.3A, 10V
Power - Max:	3.1W
Packaging:	Tape & Reel (TR)
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:	665pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:	20nC @ 10V
FET Type:	2 N-Channel (Dual)
FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	60V
Current - Continuous Drain (Id) @ 25°C:	5.3A