R8008ANX

LAPIS Semiconductor
MOSFET N-CH 800V 8A TO-220FM
Lead free / RoHS Compliant
Discrete Semiconductor Products
R8008ANX.pdf
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In Stock~~803 pcs~~: Minimum:1; Multiples:1; Manufacturer lead time 10 weeks

Price
1	$4.85
10	$4.331
25	$3.898
100	$3.552
250	$3.205
500	$2.876
1000	$2.426

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Packaging

Vgs(th) (Max) @ Id:	5V @ 1mA
Vgs (Max):	±30V
Technology:	MOSFET (Metal Oxide)
Supplier Device Package:	TO-220FM
Series:	-
Rds On (Max) @ Id, Vgs:	1.03 Ohm @ 4A, 10V
Power Dissipation (Max):	50W (Tc)
Packaging:	Bulk
Package / Case:	TO-220-3 Full Pack
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Input Capacitance (Ciss) (Max) @ Vds:	1080pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:	39nC @ 10V
FET Type:	N-Channel
FET Feature:	-
Drive Voltage (Max Rds On, Min Rds On):	10V
Drain to Source Voltage (Vdss):	800V
Current - Continuous Drain (Id) @ 25°C:	8A (Ta)