IRFS23N20D

International Rectifier (Infineon Technologies)
MOSFET N-CH 200V 24A D2PAK
Contains lead / RoHS non-compliant
Discrete Semiconductor Products
IRFS23N20D.pdf
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Vgs(th) (Max) @ Id:	5.5V @ 250µA
Technology:	MOSFET (Metal Oxide)
Supplier Device Package:	D2PAK
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	100 mOhm @ 14A, 10V
Power Dissipation (Max):	3.8W (Ta), 170W (Tc)
Packaging:	Tube
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:	1960pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:	86nC @ 10V
FET Type:	N-Channel
FET Feature:	-
Drain to Source Voltage (Vdss):	200V
Current - Continuous Drain (Id) @ 25°C:	24A (Tc)