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Vgs(th) (Max) @ Id: | 3.5V @ 250µA |
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Technology: | MOSFET (Metal Oxide) |
Supplier Device Package: | PG-TO252-3 |
Series: | CoolMOS™ |
Rds On (Max) @ Id, Vgs: | 520 mOhm @ 3.8A, 10V |
Power Dissipation (Max): | 66W (Tc) |
Packaging: | Tape & Reel (TR) |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Input Capacitance (Ciss) (Max) @ Vds: | 630pF @ 100V |
Gate Charge (Qg) (Max) @ Vgs: | 31nC @ 10V |
FET Type: | N-Channel |
FET Feature: | - |
Drain to Source Voltage (Vdss): | 600V |
Current - Continuous Drain (Id) @ 25°C: | 6.8A (Tc) |