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CSD23203W

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US$ 0.153
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Multiples:1
Manufacturer lead time 10 weeks
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Vgs(th) (Max) @ Id:1.1V @ 250µA
Vgs (Max):-6V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:6-DSBGA
Series:NexFET™
Rds On (Max) @ Id, Vgs:19.4 mOhm @ 1.5A, 4.5V
Power Dissipation (Max):750mW (Ta)
Packaging:Tape & Reel (TR)
Package / Case:6-UFBGA, DSBGA
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:914pF @ 4V
Gate Charge (Qg) (Max) @ Vgs:6.3nC @ 4.5V
FET Type:P-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Drain to Source Voltage (Vdss):8V
Current - Continuous Drain (Id) @ 25°C:3A (Ta)


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