NTMSD2P102LR2G

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Vgs(th) (Max) @ Id:	1.5V @ 250µA
Technology:	MOSFET (Metal Oxide)
Supplier Device Package:	8-SOIC
Series:	FETKY™
Rds On (Max) @ Id, Vgs:	90 mOhm @ 2.4A, 4.5V
Power Dissipation (Max):	710mW (Ta)
Packaging:	Tape & Reel (TR)
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:	750pF @ 16V
Gate Charge (Qg) (Max) @ Vgs:	18nC @ 4.5V
FET Type:	P-Channel
FET Feature:	Schottky Diode (Isolated)
Drain to Source Voltage (Vdss):	20V
Current - Continuous Drain (Id) @ 25°C:	2.3A (Ta)