SQJ456EP-T1_GE3

Vishay / Siliconix
MOSFET N-CH 100V 32A PPAK SO-8
Lead free / RoHS Compliant
Discrete Semiconductor Products
SQJ456EP-T1_GE3.pdf
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Out Stock~~0 pcs~~: Minimum:1; Multiples:1; Manufacturer lead time 10 weeks

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Vgs(th) (Max) @ Id:	3.5V @ 250µA
Technology:	MOSFET (Metal Oxide)
Supplier Device Package:	PowerPAK® SO-8
Series:	Automotive, AEC-Q101, TrenchFET®
Rds On (Max) @ Id, Vgs:	26 mOhm @ 9.3A, 10V
Power Dissipation (Max):	83W (Tc)
Packaging:	Tape & Reel (TR)
Package / Case:	PowerPAK® SO-8
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:	3342pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:	63nC @ 10V
FET Type:	N-Channel
FET Feature:	-
Drain to Source Voltage (Vdss):	100V
Current - Continuous Drain (Id) @ 25°C:	32A (Tc)