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SIHW73N60E-GE3

SIHW73N60E-GE3
Price:
US$ 6.33
Quantity:
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Out Stock0 pcs
Minimum:1
Multiples:1
Manufacturer lead time 10 weeks
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Vgs(th) (Max) @ Id:4V @ 250µA
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-247AD
Series:-
Rds On (Max) @ Id, Vgs:39 mOhm @ 36A, 10V
Power Dissipation (Max):520W (Tc)
Packaging:Tube
Package / Case:TO-247-3
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Input Capacitance (Ciss) (Max) @ Vds:7700pF @ 100V
Gate Charge (Qg) (Max) @ Vgs:362nC @ 10V
FET Type:N-Channel
FET Feature:-
Drain to Source Voltage (Vdss):600V
Current - Continuous Drain (Id) @ 25°C:73A (Tc)


If you got wrong compnents which is not you ordered.We will research who will take responsiblity about the issue.
If it is ours,we will delivery the right compnents for exchange goods after we received wrong compnents send back.
If it is yours,customer will take responsiblity about it.For details,please contact with our customer service or sales.