NP89N04PUK-E1-AY

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Out Stock~~0 pcs~~: Minimum:1; Multiples:1; Manufacturer lead time 10 weeks

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Vgs(th) (Max) @ Id:	4V @ 250µA
Technology:	MOSFET (Metal Oxide)
Supplier Device Package:	TO-263
Series:	-
Rds On (Max) @ Id, Vgs:	2.95 mOhm @ 45A, 5V
Power Dissipation (Max):	1.8W (Ta), 147W (Tc)
Packaging:	Tape & Reel (TR)
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Operating Temperature:	175°C (TJ)
Mounting Type:	Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:	5850pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:	102nC @ 10V
FET Type:	N-Channel
FET Feature:	-
Drain to Source Voltage (Vdss):	40V
Current - Continuous Drain (Id) @ 25°C:	90A (Tc)