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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > XP0431300L

XP0431300L

XP0431300L
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Voltage - Collector Emitter Breakdown (Max):50V
Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
Supplier Device Package:SMINI6-G1
Series:-
Resistor - Emitter Base (R2) (Ohms):47k
Resistor - Base (R1) (Ohms):47k
Power - Max:150mW
Packaging:Tape & Reel (TR)
Package / Case:6-TSSOP, SC-88, SOT-363
Mounting Type:Surface Mount
Frequency - Transition:150MHz, 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V
Current - Collector Cutoff (Max):500nA
Current - Collector (Ic) (Max):100mA


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