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UNR52A8G0L

UNR52A8G0L
Price:
US$ 0.071
Quantity:
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Out Stock0 pcs
Minimum:1
Multiples:1
Manufacturer lead time 10 weeks
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Voltage - Collector Emitter Breakdown (Max):50V
Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
Transistor Type:NPN - Pre-Biased
Supplier Device Package:SMini3-F2
Series:-
Resistor - Emitter Base (R2) (Ohms):5.1k
Resistor - Base (R1) (Ohms):510
Power - Max:150mW
Packaging:Tape & Reel (TR)
Package / Case:SC-85
Mounting Type:Surface Mount
Frequency - Transition:150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce:20 @ 5mA, 10V
Current - Collector Cutoff (Max):500nA
Current - Collector (Ic) (Max):80mA


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