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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > UNR221300L

UNR221300L

UNR221300L
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Voltage - Collector Emitter Breakdown (Max):50V
Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
Transistor Type:NPN - Pre-Biased
Supplier Device Package:Mini3-G1
Series:-
Resistor - Emitter Base (R2) (Ohms):47k
Resistor - Base (R1) (Ohms):47k
Power - Max:200mW
Packaging:Tape & Reel (TR)
Package / Case:TO-236-3, SC-59, SOT-23-3
Mounting Type:Surface Mount
Frequency - Transition:150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V
Current - Collector Cutoff (Max):500nA
Current - Collector (Ic) (Max):100mA


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