JAN2N3501L

Microsemi
TRANS NPN 150V 0.3A
Contains lead / RoHS non-compliant
Discrete Semiconductor Products
JAN2N3501L.pdf
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Voltage - Collector Emitter Breakdown (Max):	150V
Vce Saturation (Max) @ Ib, Ic:	400mV @ 15mA, 150mA
Transistor Type:	NPN
Supplier Device Package:	TO-5
Series:	Military, MIL-PRF-19500/366
Power - Max:	1W
Packaging:	Bulk
Package / Case:	TO-205AA, TO-5-3 Metal Can
Operating Temperature:	-65°C ~ 200°C (TJ)
Mounting Type:	Through Hole
Frequency - Transition:	-
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 150mA, 10V
Current - Collector Cutoff (Max):	10µA (ICBO)
Current - Collector (Ic) (Max):	300mA