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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > FJNS4201RBU

FJNS4201RBU

FJNS4201RBU
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Voltage - Collector Emitter Breakdown (Max):50V
Vce Saturation (Max) @ Ib, Ic:300mV @ 500µA, 10mA
Transistor Type:PNP - Pre-Biased
Supplier Device Package:TO-92S
Series:-
Resistor - Emitter Base (R2) (Ohms):4.7k
Resistor - Base (R1) (Ohms):4.7k
Power - Max:300mW
Packaging:Bulk
Package / Case:TO-226-3, TO-92-3 Short Body
Mounting Type:Through Hole
Frequency - Transition:200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce:20 @ 10mA, 5V
Current - Collector Cutoff (Max):100nA (ICBO)
Current - Collector (Ic) (Max):100mA


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