MIMD10A-7-F

Diodes Incorporated
TRANS PREBIAS NPN/PNP SOT363
Lead free / RoHS Compliant
Discrete Semiconductor Products
MIMD10A-7-F.pdf
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Voltage - Collector Emitter Breakdown (Max):	50V
Vce Saturation (Max) @ Ib, Ic:	300mV @ 1mA, 10mA / 300mV @ 5mA, 100mA
Transistor Type:	1 NPN, 1 PNP - Pre-Biased (Dual)
Supplier Device Package:	SOT-363
Series:	-
Resistor - Emitter Base (R2) (Ohms):	10k
Resistor - Base (R1) (Ohms):	100, 10k
Power - Max:	200mW
Packaging:	Tape & Reel (TR)
Package / Case:	6-TSSOP, SC-88, SOT-363
Mounting Type:	Surface Mount
Frequency - Transition:	250MHz, 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 1mA, 5V
Current - Collector Cutoff (Max):	500nA
Current - Collector (Ic) (Max):	100mA, 500mA