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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays > 2N2060M

2N2060M

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Voltage - Collector Emitter Breakdown (Max):60V
Vce Saturation (Max) @ Ib, Ic:1.2V @ 5mA, 50mA
Transistor Type:2 NPN (Dual)
Supplier Device Package:TO-78-6
Series:-
Power - Max:3W
Packaging:Bulk
Package / Case:TO-78-6 Metal Can
Operating Temperature:-65°C ~ 200°C (TJ)
Mounting Type:Through Hole
Frequency - Transition:60MHz
DC Current Gain (hFE) (Min) @ Ic, Vce:50 @ 10mA, 5V
Current - Collector Cutoff (Max):2nA (ICBO)
Current - Collector (Ic) (Max):500mA


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