NSBC124EDXV6T1

AMI Semiconductor / ON Semiconductor
TRANS 2NPN PREBIAS 0.5W SOT563
Contains lead / RoHS non-compliant
Discrete Semiconductor Products
NSBC124EDXV6T1.pdf
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Voltage - Collector Emitter Breakdown (Max):	50V
Vce Saturation (Max) @ Ib, Ic:	250mV @ 300µA, 10mA
Transistor Type:	2 NPN - Pre-Biased (Dual)
Supplier Device Package:	SOT-563
Series:	-
Resistor - Emitter Base (R2) (Ohms):	22k
Resistor - Base (R1) (Ohms):	22k
Power - Max:	500mW
Packaging:	Tape & Reel (TR)
Package / Case:	SOT-563, SOT-666
Mounting Type:	Surface Mount
Frequency - Transition:	-
DC Current Gain (hFE) (Min) @ Ic, Vce:	60 @ 5mA, 10V
Current - Collector Cutoff (Max):	500nA
Current - Collector (Ic) (Max):	100mA

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