DTC123EET1

AMI Semiconductor / ON Semiconductor
TRANS PREBIAS NPN 200MW SC75
Contains lead / RoHS non-compliant
Discrete Semiconductor Products
DTC123EET1.pdf
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Voltage - Collector Emitter Breakdown (Max):	50V
Vce Saturation (Max) @ Ib, Ic:	250mV @ 5mA, 10mA
Transistor Type:	NPN - Pre-Biased
Supplier Device Package:	SC-75, SOT-416
Series:	-
Resistor - Emitter Base (R2) (Ohms):	2.2k
Resistor - Base (R1) (Ohms):	2.2k
Power - Max:	200mW
Packaging:	Tape & Reel (TR)
Package / Case:	SC-75, SOT-416
Mounting Type:	Surface Mount
Frequency - Transition:	-
DC Current Gain (hFE) (Min) @ Ic, Vce:	8 @ 5mA, 10V
Current - Collector Cutoff (Max):	500nA
Current - Collector (Ic) (Max):	100mA